2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an
N-Channel enhancement-mode MOSFET manufactured
by the N-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications.
MARKING CODE: 702
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
SYMBOL
VDS
VDG
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
ΘJA
60
60
40
115
75
115
800
800
350
-65 to +150
357
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VGS=20V
VGS=20V
VDS=60V, VGS=0
VDS=60V, VGS=0, TA=125°C
VDS=10V, VGS=10V
ID=10μA
500
60
105
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=11.5mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TA=100°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TA=100°C
VDS=10V, ID=200mA
1.0
2.1
3.7
6.2
80
MAX
100
100
1.0
500
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
UNITS
nA
nA
μA
μA
mA
V
2.5
3.75
0.375
1.5
7.5
13.5
7.5
13.5
V
V
V
V
Ω
Ω
Ω
Ω
mS
R6 (9-February 2015)
2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
CHARACTERISTICS - Continued: (TA=25°C
TEST CONDITIONS
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=30V, VGS=4.5V, ID=100mA
VDS=30V, VGS=4.5V, ID=100mA
VDS=30V, VGS=4.5V, ID=100mA
VDD=30V, ID=200mA, RG=25Ω, RL=150Ω
VDD=30V, ID=200mA, RG=25Ω, RL=150Ω
unless otherwise noted)
TYP
MAX
5.0
50
25
0.592
0.196
0.148
20
20
UNITS
pF
pF
pF
nC
nC
nC
ns
ns
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 702
R6 (9-February 2015)
w w w. c e n t r a l s e m i . c o m
2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (9-February 2015)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
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• Supply management (Customer portals)
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
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Hauppauge, NY 11788 USA
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www.centralsemi.com
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